Kinetics of Si and Ge nanowires growth through electron beam evaporation
نویسندگان
چکیده
منابع مشابه
Kinetics of Si and Ge nanowires growth through electron beam evaporation
Si and Ge have the same crystalline structure, and although Si-Au and Ge-Au binary alloys are thermodynamically similar (same phase diagram, with the eutectic temperature of about 360°C), in this study, it is proved that Si and Ge nanowires (NWs) growth by electron beam evaporation occurs in very different temperature ranges and fluence regimes. In particular, it is demonstrated that Ge growth ...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2011
ISSN: 1556-276X
DOI: 10.1186/1556-276x-6-162